Which one of the following statement is false?

• Pure Si doped with trivalent impurities given a p- type semiconductor

• Majority carriers in a p- type semiconductor are holes

• Minority carriers in a p- type semiconductor are electron

• The resistance of intrinsic semiconductor decreases with increase of temperature

A.

Pure Si doped with trivalent impurities given a p- type semiconductor

p-type semiconductor is obtained by adding a small amount of trivalent impurity to a pure sample of semiconductor (Ge).
Majority charge carriers - holes
Minority charge carriers - electrons
n - type  semiconductor are obtained by adding a small amount of pentavalent impurity to a pure sample of semiconductor (Ge)
Majority charge carriers - electrons
The resistance of intrinsic semiconductors decreases with the increase of temperature.