The barrier potential of a p-n junction diode depends on:
i) type of semiconductor material
ii) amount of doping
iii) temperature

Which one of the following is correct?

(i) and (ii) only

(ii) only

(ii) and (iii) only

(i), (ii) and (iii)

Answer

(i), (ii) and (iii)

Barrier potential depends on the material used to make p-n junction diode (whether it is Si or Ge).
It should also depend on the amount of doping due to which the number of majority charge carriers will change. Also, it depends on temperature due to which the number of minority carriers will change.