Semiconductor Electronics: Materials, Devices and Simple Circuits
When p-n junction diode is forward biased
the depletion region is reduced and barrier height is increased
the depletion region is widened and barrier height is reduced.
both the depletion region and barrier height reducedboth the depletion region and barrier height reduced
both the depletion region and barrier height increased.
C.
both the depletion region and barrier height reducedboth the depletion region and barrier height reduced
When p-end of the p-n junction is connected to positive terminal of battery and n-end to the negative terminal of a battery, then p-n junction is said to be forward bias. In forward bias, the more numbers of electrons go from n-region to p-region and more numbers of holes go from p-region to n-region. Therefore, major current due to both types of carriers takes place through the junction causing a reduction in height of depletion region and barrier potential.
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The logic circuit shown below has the input waveforms ‘A’ and ‘B’ as shown. Pick out the correct output waveform.
output is
A working transistor with its three legs marked P, Q and R are tested using a multimeter. No conduction is found between P and Q. By connecting the common (negative) terminal of the multimeter to R and the other (positive) terminal of P or Q, some resistance is seen on the multimeter. Which of the following is true for the transistor?
In the circuit below, A and B represent two inputs and C represents the output. The circuit represents
If in a p-n junction diode, a square input signal of 10V is applied as shown Then the output signal across RL will be
Carbon, silicon and germanium have four valence electrons each. At room temperature which one of the following statements is most appropriate?
A thermocouple is made from two metals, Antimony and Bismuth. If one junction of the couple is kept hot and the other is kept cold then, an electric current will
A solid which is transparent to visible light and whose conductivity increases with temperature is formed by
In a common base mode of a transistor, t collector current is 5.488 mA for an emit current of 5.60 mA. The value of the base current amplification factor (β) will be
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