Which one of the following statement is false?
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Pure Si doped with trivalent impurities given a p- type semiconductor
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Majority carriers in a p- type semiconductor are holes
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Minority carriers in a p- type semiconductor are electron
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The resistance of intrinsic semiconductor decreases with increase of temperature
A.
Pure Si doped with trivalent impurities given a p- type semiconductor
p-type semiconductor is obtained by adding a small amount of trivalent impurity to a pure sample of semiconductor (Ge).
Majority charge carriers - holes
Minority charge carriers - electrons
n - type semiconductor are obtained by adding a small amount of pentavalent impurity to a pure sample of semiconductor (Ge)
Majority charge carriers - electrons
The resistance of intrinsic semiconductors decreases with the increase of temperature.
