Question
Pure Si at 500 K has an equal number of the electron (ne) and hole (nh) concentrations of 1.5 x 1016 m-3.Doping by indium increases nh to 4.5 x 1022 m -3.The doped semiconductor is of
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n- type with electron concentration ne = 5 x 1022 m -3
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P- type with electron concentration ne = 2.5 x 1010 m -3
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n- type with electron concentration ne = 2.5 x 1023 m -3
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p- type with electron concentration ne = 5 x 109 m -3
Solution
D.
p- type with electron concentration ne = 5 x 109 m -3
