C and si both have a same lattice structure, having 4 bonding electrons in each. However, C is insulator whereas Si is an intrinsic semiconductor. This is because
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in the case of C, the valence band is not completely filled at absolute zero temperature
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in a case C, the conduction band is partly filled even at absolute zero temperature
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the four bonding electrons in the case of C lie in the second orbit, whereas in case of Si they lie in the third
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the four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit
C.
the four bonding electrons in the case of C lie in the second orbit, whereas in case of Si they lie in the third
The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third orbit so loosely bounded valency electron in Si as compared to C.
