When p-n junction diode is forward biased
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the depletion region is reduced and barrier height is increased
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the depletion region is widened and barrier height is reduced.
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both the depletion region and barrier height reducedboth the depletion region and barrier height reduced
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both the depletion region and barrier height increased.
C.
both the depletion region and barrier height reducedboth the depletion region and barrier height reduced
When p-end of the p-n junction is connected to positive terminal of battery and n-end to the negative terminal of a battery, then p-n junction is said to be forward bias. In forward bias, the more numbers of electrons go from n-region to p-region and more numbers of holes go from p-region to n-region. Therefore, major current due to both types of carriers takes place through the junction causing a reduction in height of depletion region and barrier potential.